Author:
Wang Ying,Hu Hai-fan,Cheng Chao
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference26 articles.
1. A parametric study of power MOSFETS;Hu;PESC,1979
2. S. Yamauchi, T. Shibata, S. Nogami, 200V super junction MOSFET fabricated by high aspect ratio trench filling, in: Proc. ISPSD, 2006, pp. 64–68
3. High breakdown voltage (>1000V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process;Saito;IEEE Trans. Electron. Dev.,2005
4. Oxide-bypassed VDMOS (OBVDMOS): An alternative to superjunction high voltage MOS power devices;Liang;IEEE Electron Dev. Lett.,2001
5. Theoretical analyses of oxide-bypassed superjunction power metal oxide semiconductor field effect transistor devices;Chen;Japan J. Appl. Phys.,2005
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