Carrier diffusion processes near threading dislocations in GaN and GaN:Si characterized by low voltage cathodoluminescence
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
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1. Minority-carrier dynamics in β-gallium oxide probed by depth-resolved cathodoluminescence;Journal of Physics D: Applied Physics;2022-09-23
2. Carrier Diffusion in GaN : A Cathodoluminescence Study. II. Ambipolar versus Exciton Diffusion;Physical Review Applied;2022-02-07
3. Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy;Journal of Crystal Growth;2012-10
4. Semi-quantitative analysis of the depth distribution of radiative recombination centers in silicon power devices by cross-sectional cathodoluminescence;Journal of Applied Physics;2012-08
5. Effect of silicon and oxygen doping on donor bound excitons in bulk GaN;Physical Review B;2011-10-27
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