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In-suit investigation of DC characteristics degradation in SiGe HBT included by halogen lamp irradiation

  • Published:2016-10 Issue: Volume:98 Page:62-69
  • ISSN:0749-6036
  • Container-title:Superlattices and Microstructures
  • language:en
  • Short-container-title:Superlattices and Microstructures

Author:

Sun Yabin,Fu Jun,Wang Yudong,Zhou Wei,Li Xiaojin,Shi Yanling

Funder

National Natural Science Funds of China

National Natural Science Funds of Shanghai

Shanghai Key Laboratory of Multidimensional Information Processing

Science and Technology Commission of Shanghai Municipality

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. A 122-150 GHz LNA with 30 dB Gain and 6.2 dB noise figure in SiGe BiCMOS technology;Ben Yishay,2015

2. X- and K-band SiGe HBT LNAs with 1.2- and 2.2-dB mean noise figures;Kanar;IEEE Trans. Microw. Theory Technol.,2014

3. The effects of X-ray and proton irradiation on a 200 GHz/90 GHz complementary (npn+pnp) SiGe:C HBT technology;Diestelhorst;IEEE Trans. Nucl. Sci.,2007

4. Total ionizing dose and single event effects hardness assurance qualification issues for microelectronics;Shaneyfelt;IEEE Trans. Nucl. Sci.,2008

5. The total-dose-effects of gamma and proton irradiations on high-voltage silicon-germanium heterojunction bipolar transistors;Sun;Radiat. Eff. Defect. Solid,2013

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