Cost-effective mask-sharing technology for SOI LIGBT and PLDMOS-Reference-Cited by-同舟云学术

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Cost-effective mask-sharing technology for SOI LIGBT and PLDMOS

Published:2016-04 Issue: Volume:92 Page:359-365
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Huang Yong,Qiao Ming,Zhou Xin,Liang Tao,Li Yang,Li Zhaoji,Zhang Bo

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Fundamental Research Funds for the Central Universities

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Large current capability 270V lateral IGBT with multi-emitter;Sakano;ISPSD,2010

2. Analysis of simulation approaches for the breakdown characteristics of SOI high-voltage PMOS in a fixed power supply;Qiao;Superlattices Microstruct.,2015

3. Evolution of 200V lateral-IGBT technology;Tsujiuchi;ISPSD,2014

4. A compact model for thin SOI LIGBTs: description, experimental verification and system application;Napoli;IEEE ISPSD,2005

5. High voltage SOI P-channel field MOSFET structures;Lu;IEEE ISPSD,2009

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1. Theoretical study on optimization criterion of the triple RESURF lateral power devices via virtual junction concept;Japanese Journal of Applied Physics;2021-03-01

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