A new physical insight of RESURF effects based on gradual charge appointment concept for bulk silicon lateral power devices-Reference-Cited by-同舟云学术

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A new physical insight of RESURF effects based on gradual charge appointment concept for bulk silicon lateral power devices

Published:2016-04 Issue: Volume:92 Page:111-123
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zhang Jun,Guo Yu-Feng,Sun Yabin,Yang Kemeng,Lin Hong,Xia Xiaojuan,Zhang Changchun

Funder

Specialized Research Fund

Natural Science Foundation of Jiangsu Province of China

Opening Project of State key Laboratory of Electronic Thin Films and Integrated Devices

Key Technology Support Program of Jiangsu Province of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Variation of lateral width technique in SOI high-voltage lateral double-diffused metal–oxide–semiconductor transistors using high-k dielectric;Guo;IEEE Lett. Electron Devices,2015

2. Thin layer high voltage devices;Appels;Philips J. Res.,1980

3. Efficacy of charge sharing in reshaping the surface electric field in high voltage lateral RESURF devices;Imam;IEEE Trans. Electron Devices,2004

4. High voltage thin layer devices;Appels;IEDM Tech. Dig.,1979

5. One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation;Zhang;Chin. Phys. B,2015

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effective Concentration Profile: Mechanism of Gate Field-Plate Assistant Effect in SOI Lateral Power Devices;IEEE Transactions on Electron Devices;2018-10

2. A New Physical Insight for the 3-D-Layout-Induced Cylindrical Breakdown in Lateral Power Devices on SOI Substrate;IEEE Transactions on Electron Devices;2018-05

3. Effective Doping Concentration Theory: A New Physical Insight for the Double-RESURF Lateral Power Devices on SOI Substrate;IEEE Transactions on Electron Devices;2018-02

4. A dual channel three-terminal np-LDMOS with both majorities for conduction;Superlattices and Microstructures;2018-02

5. A Novel 3-D Analytical Method for Curvature Effect-Induced Electric Field Crowding in SOI Lateral Power Device;IEEE Transactions on Electron Devices;2016-11

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