Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD-Reference-Cited by-同舟云学术

Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD

Published:2018-08 Issue: Volume:120 Page:319-326
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Abd Rahman Mohd Nazri,Shuhaimi Ahmad^ORCID,Yusuf Yusnizam,Li Hongjian,Sulaiman Abdullah Fadil,Alif Samsudin Muhammad Esmed,Zainal Norzaini^ORCID,Abdul Khudus Muhammad I.M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference27 articles.

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3. Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE;Sakai;J. Cryst. Growth,2002

4. A study of dislocations in AlN and GaN films grown on sapphire substrates;Bai;J. Cryst. Growth,2005

5. The preparation and characterization of preferred (110) orientation aluminum nitride thin films on Si (100) substrates by pulsed laser deposition;Chen;Vacuum,2010

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