Optimization design and preparation of near ultraviolet AlGaN/GaN distributed Bragg reflectors-Reference-Cited by-同舟云学术

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Optimization design and preparation of near ultraviolet AlGaN/GaN distributed Bragg reflectors

Published:2018-10 Issue: Volume:122 Page:661-666
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Li Pengchong,Zhang Yuantao,chen Liang,Yu Ye,Han Xu,Yan Long,Deng Gaoqiang,Zhang Baolin

Funder

the National Key Research and Development Program

the National Natural Science Foundation of China

the Science and Technology Developing Project of Jilin Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers;Lu;IEEE J. Sel. Top. Quant. Electron.,2011

2. Resonant-cavity light-emitting diodes (RCLEDs) made from a simple dielectric coating of transistor outline (TO)-Can packaged InGaN LEDs for visible light communications;Tsai;IEEE Trans. Electron. Dev.,2016

3. Design and fabrication of AlGaN-based resonant-cavity-enhanced p-i-n UV PDs;Nie;IEEE J. Quant. Electron.,2009

4. Design and fabrication of UV band-pass filters based on SiO2/Si3N4 dielectric distributed bragg reflectors;Dai;Appl. Surf. Sci.,2016

5. MOCVD growth of AlN/GaN DBR structures under various ambient conditions;Yao;J. Cryst. Growth,2004

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2. Studies on the Material and Photoluminescence Characteristics of the Structure of Al0.9Ga0.1As/GaAs DBR with Varied Doping;Journal of Electronic Materials;2022-11-07

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4. Fabrication and applications of wafer-scale nanoporous GaN near-infrared distributed Bragg reflectors;Optical Materials;2020-09

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