Author:
Dai Jiangping,Gao Wang,Liu Bin,Cao Xianlei,Tao Tao,Xie Zili,Zhao Hong,Chen Dunjun,Ping Han,Zhang Rong
Funder
National Natural Science Foundation of China
Natural Science Foundation of Jiangsu Province
Jiangsu Higher Education Institutions
Solid State Lighting and Energy-saving Electronics Collaborative Innovation Center
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference19 articles.
1. Wide-bandgap semiconductor ultraviolet photodetectors;Monroy;Semiconduct. Sci. Technol.,2003
2. Ipap, Ipap, Ipap, GaN-based resonant cavity-enhanced UV-photodetectors;Toyoura;Inst. Pure Appl. Phys. Tokyo,2000
3. MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector;Xie;Acta Phys. Sin. Chem. Ed.,2007
4. Resonant-cavity-enhanced UV metal-semiconductor-metal (MSM) photodetectors based on AlGaN system;Kishino;Phys. Status Solidi a – Appl. Res.,2001
5. Design and fabrication of AlGaN-based resonant-cavity-enhanced p-i-n UV PDs;Nie;IEEE J. Quantum Electron.,2009
Cited by
44 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献