Design and fabrication of UV band-pass filters based on SiO2/Si3N4 dielectric distributed bragg reflectors

Author:

Dai Jiangping,Gao Wang,Liu Bin,Cao Xianlei,Tao Tao,Xie Zili,Zhao Hong,Chen Dunjun,Ping Han,Zhang Rong

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Jiangsu Higher Education Institutions

Solid State Lighting and Energy-saving Electronics Collaborative Innovation Center

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference19 articles.

1. Wide-bandgap semiconductor ultraviolet photodetectors;Monroy;Semiconduct. Sci. Technol.,2003

2. Ipap, Ipap, Ipap, GaN-based resonant cavity-enhanced UV-photodetectors;Toyoura;Inst. Pure Appl. Phys. Tokyo,2000

3. MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector;Xie;Acta Phys. Sin. Chem. Ed.,2007

4. Resonant-cavity-enhanced UV metal-semiconductor-metal (MSM) photodetectors based on AlGaN system;Kishino;Phys. Status Solidi a – Appl. Res.,2001

5. Design and fabrication of AlGaN-based resonant-cavity-enhanced p-i-n UV PDs;Nie;IEEE J. Quantum Electron.,2009

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