Tuning the optoeletronic characteristics of strain coupled InAs/GaAs bilayer quantum dot heterostructures through compositional and structural variabilities-Reference-Cited by-同舟云学术

Tuning the optoeletronic characteristics of strain coupled InAs/GaAs bilayer quantum dot heterostructures through compositional and structural variabilities

Published:2018-08 Issue: Volume:120 Page:335-343
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Saha Jhuma,Panda Debiprasad,Chakrabarti Subhananda

Funder

DST-Nanomission

Indian Space Research Organisation

IITBNF

NCETIS

Meity

Riber, France

Nextnano

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

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4. A multicolor, broadband (5–20 μm), quaternary-capped InAs/GaAs quantum dot infrared photodetector;Adhikary;Appl. Phys. Lett.,2012

5. Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP (001);Weber;Appl. Phys. Lett.,1999

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