Fabrication and characterization of resistive random access memory (ReRAM) devices using molybdenum trioxide (MoO3) as switching layer-Reference-Cited by-同舟云学术

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Fabrication and characterization of resistive random access memory (ReRAM) devices using molybdenum trioxide (MoO3) as switching layer

Published:2020-11 Issue: Volume:147 Page:106682
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Rasool Asif,Amiruddin R.,Mohamed I. Raja,Kumar M.C. Santhosh

Funder

Crescent seed money

BSA-Junior Research Fellowship

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference85 articles.

1. Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application;Yang;Nano Lett.,2009

2. Alternative dielectrics to silicon dioxide for memory and logic devices;Kingon;Nature,2000

3. The missing memristor found;Strukov;Nature,2008

4. Resistive switching in transition metal oxides;Sawa;Mater. Today,2008

5. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook;Kim;Nanotechnology,2011

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