Comprehensive study on the optical properties of graded Al component AlxGA1-xn nanostructures for UV photocathode-Reference-Cited by-同舟云学术

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Comprehensive study on the optical properties of graded Al component AlxGA1-xn nanostructures for UV photocathode

Published:2020-11 Issue: Volume:147 Page:106695
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Lv Zhisheng,Liu Lei,Zhangyang Xingyue,Lu Feifei,Tian Jian

Funder

Qing Lan Project of Jiangsu Province-China

Six Talent Peaks Project in Jiangsu Province-China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference34 articles.

1. Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: current and voltage dependence;Kudryashov;Semiconductors,2001

2. Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers;Kuo;Appl. Phys. Lett.,2012

3. Processing defects and devices;Pearton;J. Appl. Phys.,1999

4. Gallium clusters Gan (n = 1-6): structures, thermochemistry, and electron affinities;Zhao;ChemInform,2004

5. Synthesis of GaN:ZnO solid solution by solution combustion method and characterization for photocatalytic application;Menon,2016

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wet Chemical Synthesis of AlxGa1−xAs Nanostructures: Investigation of Properties and Growth Mechanisms;Crystals;2024-07-09

2. Effect of window layer with different growth modes on the photoelectric properties of AlGaInP LED;AIP Advances;2023-02-01

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