Double Gaussian barrier distribution of permalloy (Ni0.8Fe0.2) Schottky contacts to n-type GaN-Reference-Cited by-同舟云学术

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Double Gaussian barrier distribution of permalloy (Ni0.8Fe0.2) Schottky contacts to n-type GaN

Published:2018-08 Issue: Volume:120 Page:508-516
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Janardhanam V.,Jyothi I.,Sekhar Reddy P.R.,Cho Jaehee,Cho Jeong-Mook,Choi Chel-Jong,Lee Sung-Nam^ORCID,Rajagopal Reddy V.

Funder

National Research Foundation of Korea

Ministry of Education of the Republic of Korea

Industrial Core Technology

Ministry of Trade, Industry and Energy

Chonbuk National University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference36 articles.

1. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs;Vetury;IEEE Trans. Electron. Dev.,2001

2. Gallium nitride devices for power electronic applications;Baliga;Semicond. Sci. Technol.,2013

3. Temperature dependent 1/f noise characteristics of the Fe/GaN ferromagnetic Schottky barrier diode;Kumar;Semicond. Sci. Technol.,2015

4. GaN avalanche photodiodes;Carrano;Appl. Phys. Lett.,1999

5. Enhancing the output power of GaN-Based LEDs grown on wet-etched patterned sapphire Substrates, IEEE Photon;Lee;Technol. Lett.,2006

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