The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors-Reference-Cited by-同舟云学术

The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors

Published:2021-08 Issue: Volume:156 Page:106987
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Jiang Guangyuan,Lv Yuanjie,Lin Zhaojun,Liu Yang,Wang Mingyan,Zhou Heng

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

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4. Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures;Dalapati;Superlattice. Microst.,2020

5. 360 GHz fMAX graded-channel AlGaN/GaN HEMTs for mmW low-noise applications;Moon;IEEE Electron. Device Lett.,2020

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