Minimization of bandstructure dependent dark current in InAs/GaAs quantum dot photodetectors-Reference-Cited by-同舟云学术

Minimization of bandstructure dependent dark current in InAs/GaAs quantum dot photodetectors

Published:2021-08 Issue: Volume:156 Page:106919
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Rajanna Hamsavahini,Ghosh Kaustab

Funder

VIT University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. 1.16 μm InAs/GaAs quantum dot laser grown by metal organic chemical vapor deposition;Liu;Acta Phys. Pol., A,2018

2. Development of a 1550-nm InAs/GaAs quantum dot saturable absorber mirror with a short-period superlattice capping structure towards femtosecond fiber laser applications;Jiang;Nanoscale Res. Lett.,2019

3. InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off;Kim;Opt Express,2017

4. InAs/GaAs quantum dot infrared photodetectors on on-axis Si (100) substrates;Yoshikawa;Electron. Lett.,2018

5. others, Demonstration of InAs/InGaAs/GaAs quantum dots-in-a-well mid-wave infrared photodetectors grown on silicon substrate;Chen;J. Lightwave Technol.,2018

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1. Modeling of dark current in semispherical quantum dot structures for infrared photodetection;Optical and Quantum Electronics;2023-10-07

2. J–V characteristics of dark current in truncated conical quantum dot infrared photodetectors (QDIPs);Optical and Quantum Electronics;2023-04-08

3. Theoretical approach for the description of a single quantum dot using geometry;Physica E: Low-dimensional Systems and Nanostructures;2023-03

4. J-V Characteristics of Dark Current in Truncated Conical Quantum Dot Infrared Photodetectors (QDIPs);2022-12-19

5. Probing the bandstructure dependent figures of merit in InAs/GaAs quantum dot photodetectors;Micro and Nanostructures;2022-08