InAs/GaAs quantum dot infrared photodetectors on on‐axis Si (100) substrates-Reference-Cited by-同舟云学术

InAs/GaAs quantum dot infrared photodetectors on on‐axis Si (100) substrates

Published:2018-11 Issue:24 Volume:54 Page:1395-1397
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Yoshikawa H.¹^ORCID,Kwoen J.¹,Doe T.¹,Izumi M.²,Iwamoto S.¹,Arakawa Y.¹

Affiliation:

1. Institute for Nano Quantum Information Electronics, The University of TokyoMeguroTokyoJapan

2. Life and Environment Solution LaboratoriesSharp CorporationTenriNaraJapan

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2018.7118

Reference12 articles.

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4. Electronic characteristics of doped InAs/GaAs quantum dot photodetector: temperature dependent dark current and noise density;Liao C.‐C.;Proc. SPIE,2006

5. Multispectral imaging sensors integrated on silicon;Frigerio J.;SPIE. Newsroom,2013

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