Hydrostatic pressure effects on impurity states in GaAs/AlAs quantum wells
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. Hydrostatic pressure dependence of binding energies for donors in quantum well heterostructures
2. Simultaneous effects of hydrostatic stress and an electric field on donors in a GaAs-(Ga, Al)As quantum well
3. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
4. Effect of the Gamma -X crossover on the binding energies of confined donors in single GaAs/AlxGa1-xAs quantum-well microstructures
5. Binding energy and density of shallow impurity states in GaAs–(Ga, Al)As quantum wells: effects of an applied hydrostatic stress
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