Atomic simulation of the dynamic properties for a double period structure with 90° partial dislocation in Si-Reference-Cited by-同舟云学术

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Atomic simulation of the dynamic properties for a double period structure with 90° partial dislocation in Si

Published:2011-08 Issue:2 Volume:50 Page:157-163
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Wang Chao-ying,Wang Zhen-qing,Meng Qing-yuan,Li Chen-liang,Zheng Hong-wei

Funder

NSF of China

Fundamental Research Funds for the Central Universities

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Atomic and Electronic Structure of a Dissociated 60° Misfit Dislocation inGexSi(1−x)

2. Dislocations in diamond: Dissociation into partials and their glide motion

3. Solitons and the electrical and mobility properties of dislocations in silicon

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ab initio molecular dynamics of pipe diffusion in fcc Ni beyond transition state theory;Acta Materialia;2022-01

2. Effects of 30° partial dislocation and stacking fault on Na and Mg storage and diffusion in Si anode;Computational Materials Science;2016-06

3. The 90° partial dislocation in semiconductor silicon: An investigation from the lattice P–N theory and the first principle calculation;Acta Materialia;2016-05

4. Interstitial iron impurities at cores of dissociated dislocations in silicon;Physical Review B;2015-11-24

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