Solitons and the electrical and mobility properties of dislocations in silicon-Reference-Cited by-同舟云学术

Solitons and the electrical and mobility properties of dislocations in silicon

Published:1983-10 Issue:4 Volume:48 Page:365-377
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Heggie M.¹,Jones R.¹

Affiliation:

1. a Department of Physics , Exeter University , Stocker Road, Exeter, Devon EX4 4QL, England

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818308246488

Reference47 articles.

1. Tem Of Dislocations Under High Stress In Germanium And Doped Silicon

2. Model for the Electronic Structure of Amorphous Semiconductors

3. Anstis , G. R. Hirsch , P. B. Humphreys , C. J. Hutchison , J. L. and Ourmazd , A. Microscopy of Semiconducting Materials Inst. Phys. Conf. Ser. No. 60. 1981. Edited by: Cullis , A. G. and Joy , D. C. pp.15London, Bristol: The Institute of Physics.

4. Simple parametrized model for Jahn-Teller systems: Vacancy inp-type silicon

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