Tem Of Dislocations Under High Stress In Germanium And Doped Silicon-Reference-Cited by-同舟云学术

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Tem Of Dislocations Under High Stress In Germanium And Doped Silicon

Published:1980-01 Issue:1 Volume:118 Page:13-21
ISSN:0022-2720
Container-title:Journal of Microscopy
language:en
Short-container-title:

Author:

Alexander H.,Eppenstein H.,Gottschalk H.,Wendler S.

Publisher

Wiley

Subject

Histology,Pathology and Forensic Medicine

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1365-2818.1980.tb00241.x/fullpdf

Reference14 articles.

1. Models of the dislocation structure;Alexander;J. Physique Coll.,1979

2. Dissociation and plasticity of covalent crystals;Alexander;J. Physique Coll.,1974

3. On the core structure and mobility of dislocations in silicon under high stress;Alexander;J. Physique Coll.,1978

4. Dislocations in semiconductors as studied by weak beam electron microscopy;Cockayne;J. Physique Coll.,1979

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TEM observations of silicon deformed under an hydrostatic pressure;Microscopy of Semiconducting Materials, 1987;2021-01-31

2. Dislocations;Materials Science and Technology;2013-02-15

3. Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters;Materials Science Forum;2008-08

4. On the mobility of dislocations in semiconductor crystals;Materials Science and Engineering: A;2007-07

5. Dissociation of dislocations and the mobility of partial dislocations in elemental semiconductors;physica status solidi (a);2005-04

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