Highly flexible SRAM cells based on novel tri-independent-gate FinFET

Author:

Liu Chengsheng,Zheng Fanglin,Sun Yabin,Li Xiaojin,Shi Yanling

Funder

National Natural Science Foundation of China

National Natural Science Funds of Shanghai, China

Shanghai Sailing Program

Science and Technology Commission of Shanghai Municipality

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Technology and circuit design considerations in quasi-planar double-gate SRAM;Ananthan;IEEE Trans. Electron Dev.,2006

2. Tri-mode independent gate FinFET-based SRAM with pass-gate feedback: technology–circuit Co-Design for enhanced cell stability;Gupta;IEEE Trans. Electron Dev.,2013

3. FinFET SRAM: optimizing silicon fin thickness and fin ratio to improve stability at iso area;Lekshmanan;Proc. IEEE CICC,2007

4. An independent-gate FinFET SRAM cell for high data stability and enhanced integration density, in Proc;Liu;IEEE Int. SOI Conf.,2007

5. Tri-mode independent-gate FinFETs for dynamic voltage/frequency scalable 6T SRAMs;Gupta;IEEE Trans. Electron Dev.,2011

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3. Impact of stress effect on triple material gate step-FinFET with DC and AC analysis;Microsystem Technologies;2019-12-20

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