Dependence of heavy hole exciton binding energy and the strain distribution in GaAs 1− x Bi x /GaAs finite spherical quantum dots on Bi content in the material-Reference-Cited by-同舟云学术

Dependence of heavy hole exciton binding energy and the strain distribution in GaAs 1− x Bi x /GaAs finite spherical quantum dots on Bi content in the material

Published:2015-10 Issue: Volume:86 Page:221-227
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Das Subhasis,Sharma Akant Sagar,Das T.D.,Dhar S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference15 articles.

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