Temperature dependence of commercial 4H-SiC UV Schottky photodiodes for X-ray detection and spectroscopy-Reference-Cited by-同舟云学术

Temperature dependence of commercial 4H-SiC UV Schottky photodiodes for X-ray detection and spectroscopy

Published:2017-07 Issue: Volume:859 Page:76-82
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Zhao S.,Lioliou G.,Barnett A.M.

Funder

Science and Technologies Facilities Council, United Kingdom

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference40 articles.

1. Compound Semiconductor Radiation Detectors;Owens,2012

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2. Mo/4H-SiC Schottky diodes for room temperature X-ray and γ-ray spectroscopy;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2022-03

3. Repurposing a low-cost commercial Si photodiode as a detector for X-ray and γ-ray spectroscopy at temperatures up to 80 °C;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2021-09