Mo/4H-SiC Schottky diodes for room temperature X-ray and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e693" altimg="si353.svg"><mml:mi>γ</mml:mi></mml:math>-ray spectroscopy-Reference-Cited by-同舟云学术

Mo/4H-SiC Schottky diodes for room temperature X-ray and γ-ray spectroscopy

Published:2022-03 Issue: Volume:1027 Page:166330
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Lioliou G.^ORCID,Renz A.B.,Shah V.A.^ORCID,Gammon P.M.,Barnett A.M.

Funder

Engineering and Physical Sciences Research Council

Science and Technology Facilities Council

Leverhulme Trust

University of Warwick

University of Sussex

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference45 articles.

1. Semiconductors: Group IV Elements and III-V Compounds;Madelung,1991

4. Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe;Levinshtein,2001

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3. FPGA-based detector with SiC sensing for real-time monitoring of muon beams;Proceedings of the 13th International Symposium on Highly Efficient Accelerators and Reconfigurable Technologies;2023-06-14