Effects of low-temperature annealing on Ohmic contact of Au/p-CdZnTe
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. Properties of Pt Schottky type contacts on high-resistivity CdZnTe detectors
2. The comparison on the performance of a gamma-ray spectrometer with the variation of Pt(Au)/CdZnTe/Pt(Au) interface
3. Study of contacts to CdZnTe radiation detectors
4. Schottky barriers at Au/p-CdTe interfaces
5. Study of electroless Au film deposition on ZnCdTe crystal surfaces
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2. Effect of low-temperature rapid annealing on structural and electrical properties of electroless platinum contacts on CdZnTe detectors;Materials Science in Semiconductor Processing;2022-11
3. Comparative study of In/CdTe/Au Schottky- and p–n junction-diode detectors formed by backside laser irradiation doping;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2021-01
4. Surface analysis and electrical measurement of the ohmic contact on p-CdZnTe (111)B face with Au/Cd composite electrode;Materials Science in Semiconductor Processing;2019-08
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