Comparative study of In/CdTe/Au Schottky- and p–n junction-diode detectors formed by backside laser irradiation doping-Reference-Cited by-同舟云学术

Comparative study of In/CdTe/Au Schottky- and p–n junction-diode detectors formed by backside laser irradiation doping

Published:2021-01 Issue: Volume:985 Page:164683
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Nishizawa Junichi^ORCID,Gnatyuk Volodymyr^ORCID,Zelenska Kateryna,Koike Akifumi,Aoki Toru

Funder

2020 Cooperative Research Projects of Research Center for Biomedical Engineering, Japan

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference42 articles.

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3. Possibility of using cadmium telluride for making n-p gamma detectors;Arkad’eva;Sov. Phys. - Tech. Phys.,1966

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3. In/CdTe/Au p–n junction-diode X/γ-ray detectors formed by frontside laser irradiation doping;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2022-04

4. Characterization of Schottky-diode X/γ-ray detectors based on CdTe crystals with different uncompensated impurity concentrations;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2022-03