Radiation tolerant RF-LDMOS transistors, integrated into a 0.25μm SiGe-BICMOS technology-Reference-Cited by-同舟云学术

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Radiation tolerant RF-LDMOS transistors, integrated into a 0.25μm SiGe-BICMOS technology

Published:2019-04 Issue: Volume:924 Page:166-169
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Sorge R.,Schmidt J.,Reimer F.,Wipf Ch.,Korndörfer F.,Pliquett R.,Barth R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference3 articles.

1. K.-E. Ehwald, et al. High performance RF LDMOS transistors with 5 nm gate oxide in a 0.25 pm SiGe:C BiCMOS technology, in: IEDM Symp. Tech. Dig., Dec., 2001, p. 895.

2. TID and displacement damage effects in vertical and lateral power MOSFETs for integrated DC–DC converters;Faccio;IEEE Trans. Nucl. Sci.,2010

3. Total ionizing dose effects in shallow trench isolation oxides;Faccio;Microel. Rel.,2008

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comprehensive analysis of LDMOS transistors for analog applications under γ-radiation;Microelectronics Reliability;2023-09

2. Detailed total ionizing dose effects on LDMOS transistors;Microelectronics Reliability;2022-09

3. Simulation study on radiation hardness for total ionizing dose effect of ultra-thin shielding layer 300 V SOI LDMOS;Acta Physica Sinica;2022

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