Development of an SOI analog front-end ASIC for X-ray charge coupled devices-Reference-Cited by-同舟云学术

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Development of an SOI analog front-end ASIC for X-ray charge coupled devices

Published:2011-04 Issue:1 Volume:636 Page:S143-S148
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Kishishita Tetsuichi,Sato Goro,Ikeda Hirokazu,Kokubun Motohide,Takahashi Tadayuki,Idehara Toshihiro,Tsunemi Hiroshi,Arai Yasuo

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Hardness-by-design approach for 0.15 /spl mu/m fully depleted CMOS/SOI digital logic devices with enhanced SEU/SET immunity

2. Direct Measurement of SET Pulse Widths in 0.2-$\mu$m SOI Logic Cells Irradiated by Heavy Ions

3. Deep sub-micron FD-SOI for front-end application

4. Development of ASICs for CdTe pixel and line sensors

5. Deep sub-micron chip development

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application specific integrated circuits in radiation measuring systems (Review, Part 2);Instruments and Experimental Techniques;2016-03

2. Application specific integrated circuits for ionizing-radiation detectors (review, part 1);Instruments and Experimental Techniques;2016-01

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