Author:
Baldassarri B.,Cartiglia N.,Cenna F.,Sadrozinski H.,Seiden A.
Funder
Horizon 2020
Ministero degli Affari Esteri, Italy
U.S. Department of Energy
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. J. Lange, Radiation damage in proton irradiated epitaxial silicon detectors, Physikalische Diplomarbeit, Universitat Hamburg.
2. Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions;Kramberger;Nucl. Instrum. Methods Phys. Res. A,2002
3. Charge collection studies of proton-irradiated n- and p-type epitaxial silicon detectors;Lange;Nucl. Instrum. Methods Phys. Res. A,2010
4. Free charge carriers trapping properties in neutron-irradiated dofz silicon pad detectors;Weber;IEEE Trans. Nucl. Sci.,2007
5. Comparison of pad detectors produced on different silicon materials after irradiation with neutrons, protons and pions;Kramberger;Nucl. Instrum. Methods Phys. Res. A,2010
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm2;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2019-10
2. 4D tracking with ultra-fast silicon detectors;Reports on Progress in Physics;2017-12-18
3. Test of Ultra Fast Silicon Detectors for the TOTEM upgrade project;Journal of Instrumentation;2017-03-21
4. Ultra-Fast Silicon Detectors for 4D tracking;Journal of Instrumentation;2017-02-24
5. The 4D pixel challenge;Journal of Instrumentation;2016-12-07