X-ray and γ-ray detectors based on GaAs epitaxial structures
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference7 articles.
1. GaAs detectors — A review
2. Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance
3. Exploration of GaAs structures with π-ν junction for coordinate sensitive detectors
4. GaAs resistor structures for X-ray imaging detectors
5. Epitaxial structures based on compensated GaAs for γ- and X-ray detectors
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1. GaAs:Cr X-ray sensors noise characteristics investigation by means of amplitude spectrum analysis;Journal of Instrumentation;2018-01-24
2. Electron mobility-lifetime and resistivity mapping of GaAs:Cr wafers;Journal of Instrumentation;2017-02-06
3. Characterization of 4 inch GaAs:Cr wafers;Journal of Instrumentation;2017-01-23
4. Effect of Heat Treatment on Electrical Properties and Charge Collection Efficiency of X-Ray Sensors Based on Chrome-Compensated Gallium Arsenide;Russian Physics Journal;2016-06
5. Temperature dependencies of current-voltage characteristics of GaAs:Cr;Journal of Instrumentation;2016-03-29
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