Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance-Reference-Cited by-同舟云学术

Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance

Published:1999-09 Issue:1 Volume:434 Page:44-56
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Rogalla M,Runge K

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference32 articles.

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2. Evaluation of active layer properties and charge collection efficiency of GaAs particle detectors

3. GaAs detectors — A review

4. Studies of Charge Collection in GaAs Radiation Detectors

5. M. Toporowski et al., Proceedings of the 5th International Workshop on GaAs, Udine Italy, Nucl. Instr. and Meth. A 410, 1998.

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