Processing and characterization of epitaxial GaAs radiation detectors-Reference-Cited by-同舟云学术

Processing and characterization of epitaxial GaAs radiation detectors

Published:2015-10 Issue: Volume:796 Page:51-55
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Wu X.,Peltola T.^ORCID,Arsenovich T.,Gädda A.,Härkönen J.,Junkes A.,Karadzhinova A.,Kostamo P.,Lipsanen H.,Luukka P.^ORCID,Mattila M.,Nenonen S.,Riekkinen T.,Tuominen E.,Winkler A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

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4. Transport Properties of GaAs

5. Handbook on the Physical Properties of Ge, Si, GaAs and InP;Dargys,1994

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