P-spray implant optimization for the fabrication of n-in-p microstrip detectors

Author:

Fleta Celeste,Lozano Manuel,Pellegrini Giulio,Campabadal Francesca,Rafí Joan Marc,Ullán Miguel

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference6 articles.

1. Ionizing Radiation Effects in MOS Devices and Circuits;Ma,1989

2. Novel p-stop structure in n-side of silicon microstrip detector

3. The ATLAS silicon pixel sensors

4. Electrical characteristics of silicon pixel detectors

5. ISE Integrated System Engineering AG, Zurich, Switzerland.

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1. The shift of breakdown voltage for silicon membrane strip detectors resulting from surface avalanche;Journal of Applied Physics;2021-06-01

2. First fabrication of a silicon vertical JFET for power distribution in high energy physics applications;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2018-01

3. Gamma irradiation damage on the vertical JFET transistors fabricated at the IMB-CNM;Journal of Instrumentation;2017-03-13

4. P-stop isolation study of irradiated n-in-p type silicon strip sensors for harsh radiation environments;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2016-09

5. Combined effect of bulk and surface damage on strip insulation properties of proton irradiated n+-p silicon strip sensors;Journal of Instrumentation;2014-04-09

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