First fabrication of a silicon vertical JFET for power distribution in high energy physics applications-Reference-Cited by-同舟云学术

First fabrication of a silicon vertical JFET for power distribution in high energy physics applications

Published:2018-01 Issue: Volume:877 Page:269-277
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Fernández-Martínez Pablo,Flores D.,Hidalgo S.,Quirion D.,Durà R.,Ullán M.

Funder

Spanish Ministry of Economy and Competitiveness

FEDER

Generalitat de Catalunya

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

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3. P. Philips, ATLAS SCT power supply system, in: Proceedings of Topical Workshop on Electronics for Particle Physics 2007, TWEPP2007, September 3–7, Prague, Czech Republic (2007).

4. ATLAS collaboration, ATLAS Phase-II Upgrade Scoping Document. CERN-LHCC-2015-020.

5. Rad-hard vertical JFET switch for the HV-MUX system of the ATLAS upgrade Inner Tracker;Fernández-Martínez;J. Instrum.,2016

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1. Evaluation of radiation hardness of High-Voltage silicon vertical JFETs;Journal of Instrumentation;2020-11-02

2. Compact Modeling of SiC and GaN Junction FETs at High Temperature;Materials Science Forum;2019-07

3. Fabrication and electrical characterization of High-Voltage silicon JFETs;Journal of Instrumentation;2019-05-08

4. A HV silicon vertical JFET: TCAD simulations;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2019-03

5. Charge-based Model for Junction FETs;IEEE Transactions on Electron Devices;2018-07