Measurements and simulations of silicon semi 3D radiation detectors-Reference-Cited by-同舟云学术

Measurements and simulations of silicon semi 3D radiation detectors

Published:2006-11 Issue:1 Volume:568 Page:22-26
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Kalliopuska J.,Eränen S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Fabrication of low noise silicon radiation detectors by the planar process

2. International Technology Roadmap for Semiconductors, 2004, available at: 〈http://itrs.public.net/〉.

3. Two-dimensional Mathematical Analysis of a Planar Type Junction Field-effect Transistor

4. S. Eränen, J. Kalliopuska, J. Härkönen, T. Virolainen, I. Luusua, K.Kurvinen, M. Eräluoto, K. Leinonen, M. Palviainen and M. Koski, Silicon Semi 3D Radiation Detectors, in: Nuclear Science Symposium (NSS) Conference Record, vol. 2, Rome, Italy, 16–22 October 2004, pp. 1231–1235.

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