Multiple cell upset cross-section modeling: A possible interpretation for the role of the ion energy-loss straggling and Auger recombination-Reference-Cited by-同舟云学术

Multiple cell upset cross-section modeling: A possible interpretation for the role of the ion energy-loss straggling and Auger recombination

Published:2016-08 Issue: Volume:827 Page:1-7
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Zebrev G.I.,Zemtsov K.S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference24 articles.

1. Nanoscale Semiconductor Memories: Technology and Application, ed. by S. K. Kurinec, K. Iniewsky, CRC Press, Taylor & Francis Group, 2014.

2. 〈www.jedec.org〉, JESD89A, 10/06

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. Analysis of multiple cell upset characteristics for logical circuits in radiation environment;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2020-12