Depth profiling of boron in ultra-shallow junction devices using time-of-flight neutron depth profiling (TOF-NDP)-Reference-Cited by-同舟云学术

Depth profiling of boron in ultra-shallow junction devices using time-of-flight neutron depth profiling (TOF-NDP)

Published:2007-08 Issue:1 Volume:579 Page:148-152
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Çetiner Sacit M.,Ünlü Kenan

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

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4. The Stopping and Range of Ions in Solids;Ziegler,1985

5. D. Fink, Neutron depth profiling, Reports of the Hahn-Meitner-Institute (HMI-B), HMI-B 539, Berlin, 1996.

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4. Glass Surface Layer Density by Neutron Depth Profiling;International Journal of Applied Glass Science;2012-05-07

5. Time of Flight System for MeV Neutron;Journal of the Korean Physical Society;2009-04-15