Study of charge collection efficiency in 4H–SiC Schottky diodes with 12C ions-Reference-Cited by-同舟云学术

Study of charge collection efficiency in 4H–SiC Schottky diodes with 12C ions

Published:2009-09 Issue:1 Volume:608 Page:80-85
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

De Napoli M.,Giacoppo F.,Raciti G.,Rapisarda E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference52 articles.

1. G.L. Harris (Ed.), Properties of Silicon Carbide, EMIS Datareviews Series no. 13, an INSPEC Publication, Institution of Electrical Engineering, London, UK, 1995.

2. Development of a silicon carbide radiation detector

3. Particle detectors based on semi-insulating silicon carbide

4. Characterisation of silicon carbide detectors response to electron and photon irradiation

5. The neutron response of miniature silicon carbide semiconductor detectors

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-precision CSNS beam monitor system conceptual design based on SiC;Radiation Detection Technology and Methods;2024-08-05

2. SiC detectors: A review on the use of silicon carbide as radiation detection material;Frontiers in Physics;2022-10-12

3. A low-cost small-size commercial PIN photodiode: II. Comparison of measurements with monoenergetic electrons to analytical expressions and Monte Carlo simulations;Radiation Physics and Chemistry;2021-05

4. IBIC analysis of SiC detectors developed for fusion applications;Radiation Physics and Chemistry;2020-12

5. 4H-SiC Schottky diodes with Ni2Si contacts for X-ray detection;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2019-10