Effects of 10 MeV electron irradiation on the characteristics of gallium-nitride-based pin alpha-particle detectors-Reference-Cited by-同舟云学术

Effects of 10 MeV electron irradiation on the characteristics of gallium-nitride-based pin alpha-particle detectors

Published:2018-09 Issue: Volume:902 Page:9-13
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Zhu Zhifu,Zou Jijun,Tang Bin,Wang Zhidong,Peng Xincun,Liang Hongwei,Zhang Heqiu,Du Guotong

Funder

Natural Science Foundation of Jiangxi Province, China

National Natural Science Foundation of China

Foundation of State Key Laboratory Breeding Base of Nuclear Resources and Environment (East China Institute of Technology), China

Foundation of Engineering Research Center of Nuclear Technology Application

Foundation of Training Academic and Technical Leaders for Main Majors of Jiangxi Province, China

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference23 articles.

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4. Effects of electron irradiation and thermal annealing on characteristics of semi-insulating gallium-arsenide alpha-particle detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2020-07