First observation of the charge carrier density related gain reduction mechanism in LGADs with the Two Photon Absorption-Transient Current Technique
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
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2. Temperature dependence of the response of ultra fast silicon detectors;Mulargia;J. Instrum.,2016
3. Gain reduction mechanism observed in low gain avalanche diodes;Currás;Nucl. Instrum. Methods Phys. Res. A,2022
4. High resolution 3D characterization of silicon detectors using a two photon absorption transient current technique;Fernández García;Nucl. Instrum. Methods Phys. Res. A,2020
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1. Influence of temperature on measurements of the Two Photon Absorption – Transient Current Technique in silicon planar detectors using a 1550 nm femtosecond fibre laser;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-08
2. Techniques for the Investigation of Segmented Sensors Using the Two Photon Absorption-Transient Current Technique;Sensors;2023-01-14
3. Silicon detectors beyond LHC — RD50 status report;Journal of Instrumentation;2022-11-01
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