Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures

Author:

Zimin P.A.,Mrozovskaya E.V.,Chubunov P.A.,Anashin V.S.,Zebrev G.I.

Funder

NRNU MEPHI, Russia

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

1. RADFET: A review of the use of metal-oxide-silicon devices as integrating dosimeters;Holmes-Siedle;Int. J. Radiat. Appl. Instrum. C,1986

2. A dose rate independent p-MNOS dosimeter for space applications;Schwank;IEEE Trans. Nucl. Sci.,1996

3. Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs;Jaksic;IEEE Trans. Nucl. Sci.,2002

4. Enhanced low dose rate sensitivity (ELDRS) observed in RADFET sensor;Kim,2003

5. An embeddable SOI radiation sensor;Shaneyfelt;IEEE Trans. Nucl. Sci.,2009

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1. Computer simulation of radiation effects on non-volatile OxRAM memory;Modeling of systems and processes;2022-10-05

2. Long-term irradiation effects in p-MNOS transistor: experiment results;International Conference on Micro- and Nano-Electronics 2021;2022-01-31

3. TID Sensor Based on a Bipolar Transistor;2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC);2020-11

4. Degradation of bipolar transistors at high doses obtained at elevated temperature applied during gamma-irradiation;Microelectronics Reliability;2019-09

5. SIMULATION OF ANNEALING AND THE ELDRS IN p-MNOS RadFETs;High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes;2019

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