Superior radiation tolerance of thin epitaxial silicon detectors-Reference-Cited by-同舟云学术

Superior radiation tolerance of thin epitaxial silicon detectors

Published:2003-12 Issue:3 Volume:515 Page:665-670
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Kramberger G.,Contarato D.,Fretwurst E.,Hönniger F.,Lindström G.,Pintilie I.,Röder R.,Schramm A.,Stahl J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. F. Gianotti, et al., hep-ph/0204087, 2002.

2. Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration

3. Time development and flux dependence of neutron-irradiation induced defects in silicon pad detectors

4. M. Moll, Ph.D. Thesis, Hamburg University, 1999, DESY-THESIS-1999-040, ISSN-1435-8085.

5. Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C

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