High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates-Reference-Cited by-同舟云学术

High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates

Published:2018-06 Issue: Volume:893 Page:39-42
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Zhu Zhifu,Zhang Heqiu,Liang Hongwei,Tang Bin,Peng Xincun,Liu Jianxun,Yang Chao,Xia Xiaochuan,Tao Pengcheng,Shen Rensheng,Zou Jijun,Du Guotong

Funder

Natural Science Foundation of Jiangxi Province, China

Key Program of National Natural Science Foundation of China

Foundation of State Key Laboratory Breeding Base of Nuclear Resources and Environment (East China Institute of Technology), China

Foundation of Engineering Research Center of Nuclear Technology Application

Foundation of Training Academic and Technical Leaders for Main Majors of Jiangxi Province, China

Research Foundation of Education Bureau of Jiangxi Province, China

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference27 articles.

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