Graded composition and doping p-i-n AlxGa1−xAs/GaAs detector for unbiased voltage operation
Author:
Publisher
Springer Science and Business Media LLC
Subject
Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
https://link.springer.com/content/pdf/10.1007/s41365-022-01065-3.pdf
Reference27 articles.
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2. R. Kirschman, A new GaAs technology for stable FET’s at 300C. IEEE Electron Device Lett. 10, 610–612 (1989). https://doi.org/10.1109/55.43145
3. J.E. Eberhardt, R.D. Ryan, A.J. Tavendale, High-resolution nuclear radiation detectors from epitaxial n-gas. Appl. Phys. Lett. 17, 427–429 (1970). https://doi.org/10.1063/1.1653257
4. Q. Looker, M.G. Wood, P.W. Lake et al., GaAs X-ray detectors with sub-nanosecond temporal response. Rev. Sci. Instrum. 90, 113505 (2019). https://doi.org/10.1063/1.5127294
5. Y.Z. Guo, J.L. Liu, J.W. Liu et al., Comparison of α particle detectors based on single-crystal diamond films grown in two types of gas atmospheres by microwave plasma-assisted chemical vapor deposition. Int. J. Miner. Metall. Mater. 27, 703–712 (2020). https://doi.org/10.1007/s12613-019-1944-0
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