Measurement of the drift velocities of electrons and holes in high-ohmic〈100〉silicon-Reference-Cited by-同舟云学术

Measurement of the drift velocities of electrons and holes in high-ohmic〈100〉silicon

Published:2015-11 Issue: Volume:799 Page:81-89
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Scharf C.^ORCID,Klanner R.

Funder

HGF Alliance Physics at the Terascale

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

1. A review of some charge transport properties of silicon

2. Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of 〈1 1 1〉 and 〈1 0 0〉 crystal orientation at high electric fields

3. Hamamatsu Photonics K.K. 〈http://www.hamamatsu.com/〉, 2015.

4. CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH 〈http://www.cismst.org/〉, 2015.

5. SGS INSTITUT FRESENIUS GmbH 〈http://www.institut-fresenius.de/〉, 2015.

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