Modelling of semi-conductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: the internal field-Reference-Cited by-同舟云学术

Modelling of semi-conductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: the internal field

Published:2004-01 Issue:1-3 Volume:517 Page:109-120
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Dehimi L.,Sengouga N.,Jones B.K.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference17 articles.

1. L. Dehimi, N. Sengouga, B.K. Jones, Modelling of semi-conductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: the current–voltage characteristics, Nucl. Instr. and Meth. A, (2004) this issue.

2. Negative capacitance effects in semiconductor diodes

3. L. Dehimi, N. Sengouga, B.K. Jones, Modelling of semi-conductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: the current–voltage characteristics: the capacitance–voltage characteristics, in preparation.

4. Physics of Semi-conductors;Sze,1985

5. Forward-bias operation of Si detectors:

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