Electron–hole pair creation energy and Fano factor temperature dependence in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. A measurement of the electron–hole pair creation energy and the Fano factor in silicon for 5.9keV X-rays and their temperature dependence in the range 80–270K
2. Ionization statistics in silicon X-ray detectors — new experimental results
3. A new Monte Carlo code for full simulation of silicon strip detectors
4. Scattering by ionization and phonon emission in semiconductors
5. Scattering by ionization and phonon emission in semiconductors. II. Monte Carlo calculations
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