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Device fabrication, characterization, and thermal neutron detection response of LiZnP and LiZnAs semiconductor devices

  • Published:2016-11 Issue: Volume:836 Page:30-36
  • ISSN:0168-9002
  • Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Montag Benjamin W.,Ugorowski Philip B.,Nelson Kyle A.,Edwards Nathaniel S.,McGregor Douglas S.

Funder

Advanced Materials Program DOE – NNSA

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference28 articles.

1. Synthesis and Characterization of LiZnP and LiZnAs Semiconductor Material;Montag;J. Cryst. Growth,2015

2. Static Sublimation purification process and characterization of LiZnP semiconductor material;Montag;J. Cryst. Growth,2015

3. Static sublimation purification process and characterization of LiZnAs semiconductor material;Montag;J. Cryst. Growth,2016

4. Bulk crystal growth, and high-resolution x-ray diffraction results of LiZnP semiconductor material;Montag;J. Cryst. Growth,2015

5. Bulk crystal growth, and high-resolution X-Ray diffraction results of LiZnAs semiconductor material;Montag;J. Electron. Mater.,2016

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