Synthesis and characterization of LiZnP and LiZnAs semiconductor material-Reference-Cited by-同舟云学术

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Synthesis and characterization of LiZnP and LiZnAs semiconductor material

Published:2015-02 Issue: Volume:412 Page:103-108
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Montag Benjamin W.,Reichenberger Michael A.,Arpin Kevin R.,Sunder Madhana,Nelson Kyle A.,Ugorowski Philip B.,McGregor Douglas S.

Funder

Advanced Materials program DOE – NNSA

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference33 articles.

1. Ternary nitrides, phosphides, and arsenides of lithium;Juza;Angew. Chem. Int. Edit.,1968

2. Die verbindungen LiMgP, LiZnP und LiZnAs;Nowotny;Monatsh. Chem. und verwandte Teile anderer Wissenschaften.,1950

3. Preparation and properties of radio-frequency-sputtered half-Heusler films for use in solar cells;Kieven;Thin Solid Films.,2011

4. Optical band gap of the filled tetrahedral semiconductor LiZnAs,;Kuriyama;Phys. Rev. B: Condens. Matter.,1994

5. Crystal growth and characterization of the filled tetrahedral semiconductor lithium zinc phosphide (LiZnP);Kuriyama;J. Cryst Growth,1991

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