Characteristics of 2N4416 Si JFETs for radiation spectrometer charge sensitive preamplifiers-Reference-Cited by-同舟云学术

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Characteristics of 2N4416 Si JFETs for radiation spectrometer charge sensitive preamplifiers

Published:2024-11 Issue: Volume:1068 Page:169745
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Bodie C.S.^ORCID,Whitaker M.D.C.,Barnett A.M.

Funder

Leverhulme Trust

Science and Technology Facilities Council

Publisher

Elsevier BV

Reference19 articles.

1. Radiation Detection and Measurement;Knoll,2010

2. Electronic noise in semiconductor-based radiation detection systems: a comprehensive analysis with a unified approach;Bertuccio;IEEE Trans. Nucl. Sci.,2023

3. Electronic noise in charge sensitive preamplifiers for X-ray spectroscopy and the benefits of a SiC input JFET;Lioliou;Nucl. Instrum. Methods,2015

4. Criteria for choice of the front-end transistor for low-noise preamplification of detector signals at sub-microsecond shaping times for X- and γ-ray spectroscopy;Bertuccio;Nucl. Instrum. Methods,1996

5. A method for the determination of the noise parameters in preamplifying systems for semiconductor radiation detectors;Bertuccio;Rev. Sci. Instrum.,1993

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