Criteria of choice of the front-end transistor for low-noise preamplification of detector signals at sub-microsecond shaping times for X- and γ-ray spectroscopy-Reference-Cited by-同舟云学术

Criteria of choice of the front-end transistor for low-noise preamplification of detector signals at sub-microsecond shaping times for X- and γ-ray spectroscopy

Published:1996-10 Issue:1-2 Volume:380 Page:301-307
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Bertuccio G,Pullia A,De Geronimo G

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference22 articles.

1. Semiconductors for Room Temperature Radiation Detector Applications;Knoll,1993

2. Suboptimal filtering of 1/ƒ-noise in detector charge measurements

3. Room temperature X-ray spectroscopy with a silicon diode detector and an ultra low noise preamplifier

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